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IRF1407 MOSFET – 75V 130A N-Channel HEXFET Power MOSFET Pulled Out Package

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Tonomech offers IRF1407 MOSFET – 75V 130A N-Channel HEXFET Power MOSFET TO-220 Package.

25

In stock

IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:-

• Advanced process technology

• Ultra low on-resistance

• Dynamic dv/dt rating

• Fast switching

• Repetitive avalanche allowed up to Tjmax

  • Condition: Pulled Out
  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 0.160 Ohm
  • Continuous Drain Current: 14 A
  • Total Gate Charge: 26 nC
  • Power Dissipation: 88 W
  • Package: TO-220AB
  • Number of Channels: 1 Channel
  • Drain-Source Resistance (Rds On): 7.8mOhms
  • Gate-Source Voltage (Vgs): 20V
  • Gate Charge (Qg): 250 nC
  • Operating Temperature Range: -55 – 175°C
  • Power Dissipation (Pd): 330W

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